specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 5 april 2007 cv111 - 3a umts-band high linearity downconverter product features ? high dynamic range downconverter with integrated lo, if, & rf amps ? rf: 1900 ? 2200 mhz ? if: 65 ? 300 mhz ? +38 dbm output ip3 ? +21 dbm output p1db ? 5.3 db noise figure ? +5v single supply operation ? pb-free 6mm 28-pin qfn package ? low-side lo configuration ? common footprint with other pcs/ cellular versions product description the cv111-3a is a high linearity downconverter desi gned to meet the demanding issues for performance, functionality, and cost goals of current and next g eneration mobile infrastructure basestations. it provides hi gh dynamic range performance in a low profile surface- mount leadless package that measures 6 x 6 mm square. functionality includes rf amplification, frequency conversion and if amplification, while an integrate d lo driver amplifier powers the passive mixer. the mcm is implemented with reliable and mature gaas mesfet and ingap hbt technology. typical applications include frequency down convers ion, modulation and demodulation for receivers used in cdma, cdma2000, w-cdma / imt2000, gprs, and edge 2.5g mobile infrastructure technologies for umts frequency bands. functional diagram top view specifications (1) parameters units min typ max comments rf frequency range mhz 1900 ? 2200 lo frequency range mhz 1600 ? 2135 if center frequency range mhz 65 ? 300 see note 2 % bandwidth around if center frequency % 7.5 see note 3 if test frequency mhz 240 ssb conversion gain db 20 temp = 25 c gain drift over temp (-40 to 85 c) db 0.5 refer enced to +25 c output ip3 dbm +38 see note 4 output ip2 dbm +48 see note 4 output 1db compression point dbm +21 noise figure db 5.3 see note 5 lo input drive level dbm -2.5 0 +2.5 lo-rf isolation db 40 see note 6 lo-if isolation db 25 p lo = 0 dbm return loss: rf port db 14 return loss: lo port db 14 return loss: if port db 14 operating supply voltage v +4.9 +5 +5.1 supply current ma 290 360 480 fit rating failures / 1e9 hrs 72.1 @ 70 o c ambient, 90% confidence thermal resistance c / w 27 junction temperature c 160 see note 7 1. specifications when using the application specific circ uit (shown on page 3) with a low side lo = 0 dbm in a down converting application over the operating case temperature range. 2. if matching components affect the center if frequency. proper component values for other if center frequencies than shown can be provided by emailing to applications.engine ering@wj.com. 3. the if bandwidth of the converter is defined as 15% aro und any center frequency in its operating if frequency range. the bandwidth is determined with external components. specifications are valid around the total 7.5% bandwidth. ie. with a center frequency o f 80 mhz, the specifications are valid from 80 6 mhz. 4. assumes the supply voltage = +5 v. oip3 is measured wi th ? f = 1 mhz with if out = 5 dbm / tone. 5. assumes lo injection noise is filtered at the the rmal noise floor, -174 dbm/hz, at the rf, if, and image f requencies. 6. l-r isolation is referenced to an lo injection of 0 db m. the l-r performance shown also includes the isola tion due to an external saw filter between the rf amp lifier and mixer. 7. the maximum junction temperature ensures a minimum mttf rating of 1 million hours of usage. absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +125 c dc voltage +6 v junction temperature +220 c rf input (continuous) +2 dbm operation of this device above any of these parameters ma y cause permanent damage. ordering information part no. description cv111-3af umts-band high linearity downconverter (lead-free/rohs-compliant 6x6mm qfn package) cv111-3apcb75 fully assembled eval. board, if = 75m hz cv111-3apcb240 fully assembled eval. board, if = 24 0mhz gnd rf in gnd mixif gnd if in gnd 1 2 3 4 5 6 7 21 20 19 18 17 16 15 28 27 26 25 24 23 22 8 9 10 11 12 13 14 if amp rf amp lo driver amp if out gnd gnd gnd bias gnd lo in rf out gnd gnd gnd gnd gnd mixrf gn d gnd gnd mixlo gnd lo out gnd rf if lo
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 5 april 2007 cv111 - 3a umts-band high linearity downconverter device architecture / application circuit informati on typical downconverter performance chain analysis cumulative performance stage gain (db) output p1db (dbm) output ip3 (dbm) nf (db) current (ma) gain (db) output p1db (dbm) output ip3 (dbm) nf (db) rf amplifier 12 21 41 3.5 140 12 21.0 41.0 3.5 rf filter -2 --- --- 2.0 --- 10 19.0 39.0 3.6 lo amp / mmic mixer -8.5 8 23 9.1 80 1.5 6.1 22.2 4 .8 if amplifier 18.5 23 41 2.1 140 20 20.7 37.9 5.4 cv111-3a cumulative performance 360 20 20.7 37.9 5.4 cv111-3a : the application circuit can be broken up into fou r main functions as denoted in the colored dotted areas ab ove: rf/if diplexing (purple; this is only used with the cellu lar-band cv products), amplifier matching (green), filtering (r ed), and dc biasing (blue). there are various placeholders for chip co mponents in the circuit schematic so that a common pcb can be used for all wj single-branch converters. additional placeholders for other optional functions such as filtering are also included. rf / if amplifier matching: the rf amplifier requires a shunt matching element for optimal gain and input return loss performance. the if amplifier requires matching elements to opti mize the performance of the amplifier to the desired if cent er frequency. since if bandwidths are typically on the order of 5 to 10%, a simple two element matching network, in the form of either a high-pass or low-pass filter structure, is sufficient to match t he mmic if amplifier over these narrow bandwidths. proper com ponent values for other if center frequencies can be provided by emailing to applications.engineering@wj.com. rf bandpass filtering: bandpass filtering is recommended to achieve the best noise figure performance with the downconverter. the bandpass filter, implemented with a saw filter on the application circuit, allows for the suppression of noise from the image frequency. it is permissible to not use a fi lter and use a 2 db pad with r6, r7, and r16 instead with slightly degr aded noise figure performance. external diplexer: this is only used with the cellular-band cv products. the mixer performs the diplexing interna lly for the cv111-3a; therefore the components shown in the dip lexer section should be loaded as follows: c2 = c14 = 0 . dc biasing: dc bias must be provided for the rf, lo and if amplifiers in the converter. r1 sets the operating current for the last stage of the lo amplifier and is chosen to optimize the mixer lo drive level. proper rf chokes and bypass capacitor s are chosen for proper amplifier biasing at the intended frequency of operation. the ?+5 v? dc bias should be supplied directly from a v oltage regulator. if amplifier matching frequency (mhz) 40 50 75 100 125 130 155 180 210 240 l7 (nh) 470 430 150 150 120 120 100 82 82 56 c17 (pf) 24 15 22 10 8.2 6.8 5.6 4.7 3.3 3.9 r8 (ohms) 4.7 4.7 3.3 2.2 2.2 2.2 2.2 2.2 2.2 2.2 l4 (nh) 470 240 330 330 330 330 330 330 220 220 printed circuit board material: .014? fr - 4, 4 layers, .062? total thickness gnd rf in gnd mixif gnd if in gnd 1 2 3 4 5 6 7 21 20 19 18 17 16 15 28 27 26 25 24 23 22 8 9 10 11 12 13 14 if amp rf amp lo driver amp if out gnd n/c gnd bias gnd lo in rf out gnd n/c gnd n/c gnd mixrf gnd n/c gnd mixlo gnd lo out gnd rf if lo rf amp bias if amp bias lo amp bias lo amp bias rf bandpass filter / attenuator pad rf amp matching if amp matching rf / if diplexer (used for cellular versions only)
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 5 april 2007 cv111 - 3a umts-band high linearity downconverter downconverting application circuit: cv111-3apcb75 rf = 1900 ? 2200 mhz, if = 75 mhz pcb layout circuit board material: .014? fr-4, 4 layers, .062? total thickness bill of materials ref. desig. component r1 13 chip resistor, size 0805 r2, r3, r4, r5, c2, c14 0 chip resistor r6, r7, r9, r10 470 chip resistor r8 3.3 chip resistor r11, r16 10 chip resistor c1, c3, c4, c5, c6 100 pf chip capacitor c7, c9, c16 0.018 f chip capacitor c8, c10 1000 pf chip capacitor c11, c12, c13, c15, c21, f1, l5, l6, l8, l10 shown in silkscreen, but not used in actual circuit. c17 22 pf chip capacitor c18 1.5 pf chip capacitor l2 18 nh chip inductor l3 120 nh chip inductor l4 220 nh chip inductor, size 0805 l7 22 nh chip inductor u1 cv111-3a wj converter all components are of size 0603 unless otherwise specified.
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 5 april 2007 cv111 - 3a umts-band high linearity downconverter downconverting application circuit: cv111-3apcb240 rf = 1900 ? 2200 mhz, if = 240 mhz pcb layout circuit board material: .014? fr-4, 4 layers, .062? total thickness bill of materials ref. desig. component r1 13 chip resistor, size 0805 r2, r3, r4, r5, c2, c14 0 chip resistor r6, r7, r9, r10 470 chip resistor r8 2.2 chip resistor r11, r16 10 chip resistor c1, c3, c4, c5, c6 100 pf chip capacitor c7, c9, c16 0.018 f chip capacitor c8, c10 1000 pf chip capacitor c11, c12, c13, c15, c21, f1, l5, l6, l8, l10 shown in silkscreen, but not used in actual circuit. c17 3.9 pf chip capacitor c18 1.5 pf chip capacitor l2 18 nh chip inductor l3 120 nh chip inductor l4 220 nh chip inductor, size 0805 l7 56 nh chip inductor u1 cv111-3a wj converter all components are of size 0603 unless otherwise specified.
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 5 april 2007 cv111 - 3a umts-band high linearity downconverter mechanical information this package is lead-free/rohs-compliant. the plat ing material on the pins is annealed matte tin over copper. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern product marking the component will be lasermarked with a ?cv111-3af? product label with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iii value: passes 500v to <1000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 functional pin layout pin function pin function 1 rf amp output 15 lo amp input 2 gnd 16 gnd 3 n/c or gnd 17 lo amp bias 4 gnd 18 gnd 5 n/c or gnd 19 n/c or gnd 6 gnd 20 gnd 7 mixer rf input 21 if amp output/bias 8 gnd 22 gnd 9 n/c or gnd 23 if amp input 10 gnd 24 gnd 11 mixer lo input 25 mixer if output 12 gnd 26 gnd 13 lo amp output/bias 27 rf amp input 14 gnd 28 gnd
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